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1 white electronic designs corporation ? phoenix, az ? (602) 437-1520 hi-reliability product wf1m32b-xxx3 1mx32 3.3v flash module features n access times of 100, 120, 150ns n packaging ? 66 pin, pga type, 1.185" square, hermetic ceramic hip (package 401) ? 68 lead, low profile cqfp (g2t), 4.6mm (0.180") square (package 509) n 1,000,000 erase/program cycles n sector architecture ? one 16kbyte, two 8kbytes, one 32kbyte, and fifteen 64kbytes in byte mode ? any combination of sectors can be concurrently erased. also supports full chip erase n organized as 1mx32 n commercial, industrial and military temperature ranges n 3.3 volt for read and write operations n boot code sector architecture (bottom) n low power cmos, 1.0ma standby n embedded erase and program algorithms n built-in decoupling caps for low noise operation n erase suspend/resume ? supports reading data from or programing data to a sector not being erased n low current consumption typical values at 5mhz: ? 40ma active read current ? 80ma program/erase current n weight wf1m32b-xg2tx3 -8 grams typical WF1M32B-XHX3 -13 grams typical note: for programming information refer to flash programming 8m3 application note. may 1999 rev. 4 i/o 8 i/o 9 i/o 10 a 14 a 16 a 11 a 0 a 18 i/o 0 i/o 1 i/o 2 reset cs 2 gnd i/o 11 a 10 a 9 a 15 v cc cs 1 a 19 i/o 3 i/o 15 i/o 14 i/o 13 i/o 12 oe a 17 we i/o 7 i/o 6 i/o 5 i/o 4 i/o 24 i/o 25 i/o 26 a 7 a 12 nc a 13 a 8 i/o 16 i/o 17 i/o 18 v cc cs 4 nc i/o 27 a 4 a 5 a 6 nc cs 3 gnd i/o 19 i/o 31 i/o 30 i/o 29 i/o 28 a 1 a 2 a 3 i/o 23 i/o 22 i/o 21 i/o 20 11 22 33 44 55 66 1 12 23 34 45 56 pin configuration for WF1M32B-XHX3 pin description top view i/o 0-31 data inputs/outputs a 0-19 address inputs we write enable cs 1-4 chip selects oe output enable reset reset v cc power supply gnd ground nc not connected block diagram 1m x 8 8 i/o 0-7 cs 1 1m x 8 8 i/o 8-15 cs 2 1m x 8 8 i/o 16-23 cs 3 1m x 8 8 i/o 24-31 cs 4 a 0 - 19 oe we reset
2 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 gnd i/o 8 i/o 9 i/o 10 i/o 11 i/o 12 i/o 13 i/o 14 i/o 15 v cc a 11 a 12 a 13 a 14 a 15 a 16 cs 1 oe cs 2 a 17 we 2 we 3 we 4 a 18 a 19 nc i/o 16 i/o 17 i/o 18 i/o 19 i/o 20 i/o 21 i/o 22 i/o 23 gnd i/o 24 i/o 25 i/o 26 i/o 27 i/o 28 i/o 29 i/o 30 i/o 31 rese t a 0 a 1 a 2 a 3 a 4 a 5 cs 3 gnd cs 4 we 1 a 6 a 7 a 8 a 9 a 10 v cc pin configuration for wf1m32b-xg2tx3 pin description top view i/o 0-31 data inputs/outputs a 0-19 address inputs we 1-4 write enables cs 1-4 chip selects oe output enable reset reset/powerdown v cc power supply gnd ground the white 68 lead g2t cqfp fills the same fit and function as the jedec 68 lead cqfj or 68 plcc. but the g2t has the tce and lead inspection advantage of the cqfp form. 0.940" 1m x 8 8 i/o 0-7 cs 1 1m x 8 8 i/o 8-15 cs 2 1m x 8 8 i/o 16-23 cs 3 1m x 8 8 i/o 24-31 cs 4 a 0-19 oe we 3 we 2 we 1 we 4 reset block diagram
3 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 absolute maximum ratings notes: 1. stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. parameter unit operating temperature -55 to +125 c supply voltage range (v cc ) -0.5 to +4.0 v signal voltage range -0.5 to vcc +0.5 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c endurance (write/erase cycles) 1,000,000 min. cycles recommended operating conditions parameter symbol min max unit supply voltage v cc 3.0 3.6 v input high voltage v ih 0.7 x vcc v cc + 0.3 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c operating temp. (ind.) t a -40 +85 c capacitance (t a = +25 c) parameter symbol conditions max unit oe capacitance c oe v in = 0 v, f = 1.0 mhz 50 pf we 1-4 capacitance c we v in = 0 v, f = 1.0 mhz 20 pf cs 1-4 capacitance c cs v in = 0 v, f = 1.0 mhz 20 pf data i/o capacitance c i/o v i/o = 0 v, f = 1.0 mhz 20 pf address input capacitance c ad v in = 0 v, f = 1.0 mhz 50 pf this parameter is guaranteed by design but not tested. parameter symbol conditions min max unit input leakage current i li v cc = 3.6, v in = gnd or v cc 10 m a output leakage current i lox32 v cc = 3.6, v in = gnd or v cc 10 m a v cc active current for read (1) i cc1 cs = v il , oe = v ih , f = 5mhz 120 ma v cc active current for program or erase (2) i cc2 cs = v il , oe = v ih 140 ma v cc standby current i cc3 v cc = 3.6, cs = v ih , f = 5mhz 200 m a output low voltage v o l i ol = 5.8 ma, v cc = 3.0 0.45 v output high voltage v oh1 i oh = -2.0 ma, v cc = 3.0 0.85 x v cc v low v cc lock-out voltage (4) v lko 2.3 2.5 v dc characteristics - cmos compatible (v cc = 3.3v, v ss = 0v, t a = -55 c to +125 c) notes: 1. the i cc current listed includes both the dc operating current and the frequency dependent component (at 5 mhz). the frequency componen t typically is less than 8 ma/mhz, with oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress. 3. dc test conditions: v il = 0.3v, v ih = v cc - 0.3v 4. guaranteed by design, but not tested. data retention parameter test conditions min unit minimum pattern data 150 c 10 years retention time 125 c 20 years
4 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ac characteristics C write/erase/program operations,cs controlled (v cc = 3.3v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -100 -120 -150 unit min max min max min max write cycle time t avav t wc 100 120 150 ns write enable setup time t wlel t ws 000ns chip select pulse width t eleh t cp 45 50 50 ns address setup time t avel t as 000ns data setup time t dveh t ds 45 50 50 ns data hold time t ehdx t dh 000ns address hold time t elax t ah 45 50 50 ns chip select pulse width high t ehel t cph 20 20 20 ns duration of byte programming operation (1) t whwh1 300 300 300 m s sector erase time t whwh2 15 15 15 sec read recovery time (2) t ghel 000 m s chip programming time 50 50 50 sec 1. typical value for t whwh1 is 9 m s. 2. guaranteed by design, but not tested. ac test circuit ac test conditions notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 w . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. parameter typ unit input pulse levels v il = 0, v ih = 2.5 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh
5 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ac characteristics C write/erase/program operations - we controlled (v cc = 3.3v, t a = -55 c to +125 c) parameter symbol -100 -120 -150 unit min max min max min max write cycle time t avav t wc 100 120 150 ns chip select setup time t elwl t cs 000 ns write enable pulse width t wlwh t wp 50 50 65 ns address setup time t avwl t as 000 ns data setup time t dvwh t ds 50 50 65 ns data hold time t whdx t dh 000 ns address hold time t wlax t ah 50 50 65 ns write enable pulse width high t whwl t wph 30 30 35 ns duration of byte programming operation (1) t whwh1 300 300 300 m s sector erase t whwh2 15 15 15 sec read recovery time before write (3) t gh w l 000 m s v cc setup time t vcs 50 50 50 m s chip programming time 50 50 50 sec output enable setup time t oes 000 ns output enable hold time (2) t oeh 10 10 10 ns 1. typical value for t whwh1 is 9 m s. 2. for toggle and data polling. 3. guaranteed by design, but not tested. ac characteristics C read-only operations (v cc = 3.3v, t a = -55 c to +125 c) parameter symbol -100 -120 -150 unit min max min max min max read cycle time t avav t rc 100 120 150 ns address access time t avqv t acc 100 120 150 ns chip select access time t elqv t ce 100 120 150 ns output enable to output valid t glqv t oe 40 50 55 ns chip select high to output high z (1) t ehqz t df 30 30 40 ns output enable high to output high z (1) t ghqz t df 30 30 40 ns output hold from addresses, cs or oe change, t axqx t oh 000ns whichever is first 1. guaranteed by design, not tested.
6 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ac waveforms for read operations addresses cs oe we outputs high z addresses stable t oe t rc output valid t ce t acc t oh high z t df
7 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 notes: 1. pa is the address of the memory location to be programmed. 2. pd is the data to be programmed at byte address. 3. d 7 is the output of the complement of the data written to each chip. 4. d out is the output of the data written to the device. 5. figure indicates last two bus cycles of four bus cycle sequence. write/erase/program operation, we controlled addresses cs oe we data aaah pa pa t wc t cs pd d 7 d out t ah t wph t dh t ds data polling t as t rc t wp a0h t oe t df t oh t ghwl t whwh1
8 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ac waveforms chip/sector erase operations note: 1. sa is the sector address for sector erase. addresses cs oe we data v cc aaah 555h 555h sa aaah aaah t wp t cs t vcs 10h/30h 55h 80h 55h aah aah t ah t ghwl t wph t dh t ds t as
9 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ac waveforms for data polling during embedded algorithm operations cs oe we t oe t ce t ch t oh d7 d7 = valid data high z d0-d6 = invalid d0-d7 valid data t df d7 d0-d6 t oeh t whwh 1 or 2 data
10 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 notes: 1. pa represents the address of the memory location to be programmed. 2. pd represents the data to be programmed at byte address. 3. d 7 is the output of the complement of the data written to each chip. 4. d out is the output of the data written to the device. 5. figure indicates the last two bus cycles of a four bus cycle sequence. addresses we oe cs data aaah pa pa t wc t ws pd d 7 d out t ah t cph t cp t dh t ds data polling t as t ghel a0h t whwh1 alternate cs controlled programming operation timings
11 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 package 509: 68 lead, low profile ceramic quad flat pack, cqfp (g2t) 0.38 (0.015) 0.05 (0.002) 0.27 (0.011) 0.04 (0.002) 25.15 (0.990) 0.26 (0.010) sq 1.27 (0.050) typ 24.03 (0.946) 0.26 (0.010) 22.36 (0.880) 0.26 (0.010) sq 20.3 (0.800) ref 4.57 (0.180) max 0.19 (0.007) 0.06 (0.002) 23.87 (0.940) ref 1.0 (0.040) 0.127 (0.005) 0.25 (0.010) ref 1 / 7 r 0.25 (0.010) detail a see detail "a" pin 1 all linear dimensions are millimeters and parenthetically in inches 0.940" typ the white 68 lead g2t cqfp fills the same fit and function as the jedec 68 lead cqfj or 68 plcc. but the g2t has the tce and lead inspection advantage of the cqfp form.
12 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 package 401: 66 pin, pga type, ceramic hex-in-line package, hip (h) 30.1 (1.185) 0.38 (0.015) sq 25.4 (1.0) typ 15.24 (0.600) typ 0.76 (0.030) 0.1 (0.005) 6.22 (0.245) max 3.81 (0.150) 0.1 (0.005) 2.54 (0.100) typ 25.4 (1.0) typ 1.27 (0.050) 0.1 (0.005) 1.27 (0.050) typ dia 0.46 (0.018) 0.05 (0.002) dia pin 1 identifier square pad on bottom all linear dimensions are millimeters and parenthetically in inches
13 white electronic designs corporation ? phoenix, az ? (602) 437-1520 wf1m32b-xxx3 ordering information lead finish: blank = gold plated leads a = solder dip leads programming voltage 3 = 3.3v device grade: m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 c to +70 c package type: h = ceramic hex in line package, hip (package 401) g2t = 22mm ceramic quad flat pack, low profile cqfp (package 509) access time (ns) improvement mark b = boot block (bottom sector) organization, 1m x 32 user configurable as 2m x 16 or 4m x 8 flash white electronic designs corp. w f 1m32 b - xxx x x 3 x

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